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@PHDTHESIS{Leonhardt:1002761,
      author       = {Leonhardt, Tim},
      othercontributors = {Bluhm, Jörg and Schäpers, Thomas},
      title        = {{D}evelopment of device design, processing, and
                      instrumentation for scaleable universal quantum computation
                      in silicon germanium heterostructures},
      school       = {RWTH Aachen University},
      type         = {Dissertation},
      address      = {Aachen},
      publisher    = {RWTH Aachen University},
      reportid     = {RWTH-2025-00668},
      pages        = {1 Online-Ressource : Illustrationen},
      year         = {2024},
      note         = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
                      University 2025; Dissertation, RWTH Aachen University, 2024},
      abstract     = {In this thesis, a measurement and control setup for
                      Elzerman readout and silicon spin qubit experiments, like T1
                      measurements, is designed and optimized. Developments in
                      amplifier choice and testing, impedance matching, and
                      thedesign and concept of an interposer-PCB integration
                      platform result in a low noise, high-bandwidth setup which,
                      after first characterizations, is sufficient for experiments
                      on universal control in silicon quantum dots. Remaining
                      dominant contributions are identified. For critical
                      thermalization with single-spin qubit readout, we have
                      designed and produced multiple cryogenic filters for up to
                      192 DC lines with transmission characteristics comparable to
                      less scalable PCB solutions. The identified and resolved
                      limitations allow for Elzerman readout at below 1.5 T.
                      Developments in electron beam fabrication enable the
                      smallest gate pitch reported for gate-confined single-layer
                      quantum dots. Asetup and tuning protocol is revised to
                      identify dis-functional samples early in the tuning process.
                      The low-frequency noise within the 10-kHz measurement
                      bandwidth for undoped MBE structures is significantly lower
                      in our sample than in previously reported CVD samples. A
                      triangulation method has been developed and improved to
                      quantify the influence of the displacement, the respective
                      electric field strength due to disorder charges and
                      subsequently define limits on defect localization in the
                      sample stack. These are consistent with estimates from other
                      work. These experiments show that the MBE-grown
                      heterostructures, sample fabrication, and measurement setup
                      are suitable for silicon single-spin experiments and provide
                      a direction to further improve reliability, tunability, and
                      fidelity of laterally defined qubits in undoped silicon
                      heterostructures.},
      cin          = {132210 / 130000},
      ddc          = {530},
      cid          = {$I:(DE-82)132210_20140620$ / $I:(DE-82)130000_20140620$},
      typ          = {PUB:(DE-HGF)11},
      doi          = {10.18154/RWTH-2025-00668},
      url          = {https://publications.rwth-aachen.de/record/1002761},
}