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Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures

; ; ; ; ; ; ;

In
Journal of applied physics 137(2), Seiten/Artikel-Nr.:025301

ImpressumMelville, NY : American Inst. of Physics

Umfang1-11

ISSN1089-7550

Online
DOI: 10.1063/5.0232252

DOI: 10.18154/RWTH-2025-01414
URL: https://publications.rwth-aachen.de/record/1004400/files/1004400.pdf

Einrichtungen

  1. Lehrstuhl für Experimentalphysik und II. Physikalisches Institut (132210)
  2. Fachgruppe Physik (130000)


Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
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Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-85214915701
WOS Core Collection: WOS:001393491000008

Interne Identnummern
RWTH-2025-01414
Datensatz-ID: 1004400

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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130000
132210
 Record created 2025-02-11, last modified 2026-03-18
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