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@PHDTHESIS{Kopperberg:1009110,
      author       = {Kopperberg, Nils},
      othercontributors = {Waser, Rainer and Jungemann, Christoph},
      title        = {{M}odelling the reliability of valence change mechanism
                      devices},
      school       = {Rheinisch-Westfälische Technische Hochschule Aachen},
      type         = {Dissertation},
      address      = {Aachen},
      publisher    = {RWTH Aachen University},
      reportid     = {RWTH-2025-03343},
      pages        = {1 Online-Ressource : Illustrationen},
      year         = {2025},
      note         = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
                      University; Dissertation, Rheinisch-Westfälische Technische
                      Hochschule Aachen, 2025},
      abstract     = {The steadily increasing demands on modern memory
                      technologies have sparked interest in resistive memory
                      solutions, particularly valence change mechanism-based (VCM)
                      memory cells. VCM is a promising subcategory of redox-based
                      resistive switching random access memory (ReRAM) and offers
                      properties such as high scalability, low power consumption,
                      and non-volatility, making it suitable for high-density
                      applications. However, the widespread adoption of VCM ReRAM
                      faces significant challenges related to reliability,
                      particularly regarding variability, data retention, and
                      endurance. These issues are primarily due to the stochastic
                      dynamics of oxygen vacancies within the metal oxide layer,
                      leading to fluctuations in resistance states, switching
                      voltages, and read currents.This dissertation addresses
                      these challenges through the development of two Kinetic
                      Monte Carlo (KMC) models: a one-dimensional (1D) model
                      focusing on the study of endurance and a three-dimensional
                      (3D) model that addresses variability and retention. The 1D
                      KMC model enables the simulation of numerous switching
                      cycles with high computational efficiency and accurately
                      captures the movement of oxygen vacancies in a simplified
                      filament structure. This allows for a detailed analysis of
                      ageing mechanisms such as the “stuck-bit” phenomenon,
                      which is caused by interactions between cell and peripheral
                      resistances. The 3D KMC model extends the analysis by
                      simulating the spatially resolved dynamics of oxygen
                      vacancies, enabling a differentiated investigation of
                      variability and retention under realistic operating
                      conditions. Both models show a strong agreement with
                      experimental observations, precisely reproducing the
                      measured resistance distributions, retention behaviour, and
                      read noise characteristics. This agreement confirms the
                      predictive power of the models for reliability analysis of
                      VCM ReRAM.The combined modelling approach allows for a
                      comprehensive statistical assessment of VCM ReRAM
                      reliability across numerous cells and cycles. Based on these
                      results, targeted optimisations, such as programming
                      adjustments and doping strategies, can be proposed to
                      significantly improve the reliability and commercial
                      viability of VCM ReRAM. Future work could aim to further
                      refine these models by incorporating additional physical
                      mechanisms and expanding the focus to surface effects,
                      thereby enhancing the suitability of VCM ReRAM for
                      large-scale applications.},
      cin          = {611610},
      ddc          = {621.3},
      cid          = {$I:(DE-82)611610_20140620$},
      pnm          = {SFB 917 T01 - Fehlermechanismus und Zuverlässigkeit von
                      Valenzwechselspeichern (T01*) (426866072) / BMBF 16ES1134 -
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC - (BMBF-16ES1134) / BMBF 16ME0399 - Verbundprojekt:
                      Neuro-inspirierte Technologien der künstlichen Intelligenz
                      für die Elektronik der Zukunft - NEUROTEC II -
                      (BMBF-16ME0399) / SFB 917: Resistiv schaltende Chalkogenide
                      für zukünftige Elektronikanwendungen: Struktur, Kinetik
                      und Bauelementskalierung "Nanoswitches"},
      pid          = {G:(GEPRIS)426866072 / G:(DE-82)BMBF-16ES1134 /
                      G:(DE-82)BMBF-16ME0399 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)11},
      doi          = {10.18154/RWTH-2025-03343},
      url          = {https://publications.rwth-aachen.de/record/1009110},
}