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%0 Journal Article
%A Rothstein, Alexander
%A Fischer, Ammon
%A Achtermann, Anthony
%A Icking, Eike Thomas
%A Hecker, Katrin
%A Banszerus, Luca
%A Otto, Martin
%A Trellenkamp, Stefan
%A Lentz, Florian
%A Watanabe, Kenji
%A Taniguchi, Takashi
%A Beschoten, Bernd
%A Dolleman, Robin J.
%A Kennes, Dante Marvin
%A Stampfer, Christoph
%T Gate-Defined Single-Electron Transistors in Twisted Bilayer Graphene
%J Nano letters
%V 25
%N 16
%@ 1530-6992
%C Washington, DC
%I ACS Publ.
%M RWTH-2025-04479
%P 6429-6437
%D 2025
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001467496400001
%$ pmid:40229198
%R 10.1021/acs.nanolett.4c06492
%U https://publications.rwth-aachen.de/record/1011003