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Industrially Fabricated Single-Electron Quantum Dots in Si/Si—Ge Heterostructures

; ; ; ; ; ; ; ; ; ; ; ; ; ;

In
IEEE electron device letters 46(5), Seiten/Artikel-Nr.:868-871

ImpressumNew York, NY : IEEE

ISSN0193-8576

Online
DOI: 10.1109/LED.2025.3553672


Einrichtungen

  1. Lehrstuhl für Experimentalphysik und II. Physikalisches Institut (132210)
  2. Fachgruppe Physik (130000)
  3. JARA-Institut für Quanteninformation (080043)


Thematische Einordnung (Klassifikation)
DDC: 620


Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105000630266
WOS Core Collection: WOS:001482876000028

Interne Identnummern
RWTH-2025-07341
Datensatz-ID: 1017354

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Mathematics and Natural Sciences (Fac.1) > Department of Physics
Central and Other Institutions
Public records
Publications database
080043
130000
132210
 Record created 2025-08-26, last modified 2026-01-30
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