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@PHDTHESIS{Stasner:1017604,
author = {Stasner, Pascal},
othercontributors = {Waser, Rainer and Lemme, Max C.},
title = {{N}anofabrication and device engineering solutions for
improved resistive switching reliability},
school = {Rheinisch-Westfälische Technische Hochschule Aachen},
type = {Dissertation},
address = {Aachen},
publisher = {RWTH Aachen University},
reportid = {RWTH-2025-07435},
pages = {1 Online-Ressource : Illustrationen},
year = {2025},
note = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
University; Dissertation, Rheinisch-Westfälische Technische
Hochschule Aachen, 2025},
abstract = {Resistive switching based on the filamentary valence change
mechanism (VCM) enables the resistance modulation of a
normally insulating oxide by a conductive oxygen-deficient
filamentary region. Current research is using this ability
of devices to set the resistance to two or more different
states for novel non-volatile memory concepts such as
redox-based random access memory (ReRAM) or
computation-in-memory. Here, the conductivity of the device
is controlled by applying electrical stimuli that cause a
redistribution of oxygen vacancies in the nanoscaled
filament. However, the stochastic nature of the filament
formation and redistribution is the source of many
reliability problems that prevent widespread industrial use
of VCM devices. This dissertation addresses the challenges
in resistance state write-variability, instability and
analog resistance modulation with a focus on device
development and nanofabrication. Optimization of filament
stability requires control of the migration of oxygen
vacancies in the switching oxide, which is not affected by
conventional electrode scaling. Here, a new device concept
is proposed in which the volume of the switching oxide, and
thus the filament, is laterally confined to 10 nm. The
practical device fabrication with sub-lithographic scaling
is implemented in two steps: the oxide nano-fin and the
oxide nano-pillar device. The resistive switching of the
nanofin device with a lateral oxide dimension of 10 nm is
demonstrated with over 100,000 switching cycles without any
sign of failure. The reliability improvement due to filament
confinement is quantified for the nano-devices using
electrical measurements compared to unscaled reference
cells. The results show a reduction in write-variability and
instability of the high-resistance state, which is
particularly sensitive to oxygen vacancy migration. Further
investigations promise a further improvement in reliability
through full lateral filament confinement in the oxide
nano-pillar device concept. The feasibility of process
integration is demonstrated on a successfully resistive
switching device. In order to present meaningful behavioral
trends of various device engineering approaches, despite the
variability-prone nature of VCM, a measurement methodology
is being developed that rapidly captures data sets of over
1,000,000 switching cycles with 2,500 individually
parameterized control parameters. This allows the
identification of device characteristics that stabilize
well-controlled analog SET processes independent of
operation parameters. The experimental implementation of the
concept proposed in this work motivates a focus shift of
future research from the prevalent electrode scaling to
filament confinement by scaling the switching oxide volume.
This will improve the reliability of VCM devices, especially
in combination with other device engineering approaches
investigated here.},
cin = {611610},
ddc = {621.3},
cid = {$I:(DE-82)611610_20140620$},
pnm = {BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte
Technologien der künstlichen Intelligenz für die
Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) /
BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte
Technologien der künstlichen Intelligenz für die
Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) /
BMBF 03ZU1106AA - NeuroSys: Memristor Crossbar Architekturen
(Projekt A) - A (03ZU1106AA) / BMBF 03ZU1106BA - NeuroSys:
Skalierbare Photonische Neuromorphe Schaltkreise (Projekt B)
- A (03ZU1106BA) / SFB 917 A02 - Korrelation zwischen
atomarer Struktur und elektronischen Zuständen in resistiv
schaltenden Oxiden (A02) (202217763)},
pid = {G:(DE-82)BMBF-16ME0398K / G:(DE-82)BMBF-16ME0399 /
G:(BMBF)03ZU1106AA / G:(BMBF)03ZU1106BA /
G:(GEPRIS)202217763},
typ = {PUB:(DE-HGF)11},
doi = {10.18154/RWTH-2025-07435},
url = {https://publications.rwth-aachen.de/record/1017604},
}
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