h1

% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INPROCEEDINGS{Fa:1021032,
      author       = {Fa, Yuan and Braun, Dennis and Völkel, Lukas and Lerch,
                      Holger and Kalisch, Holger and Heuken, Michael and Vescan,
                      Andrei and Wang, Zhenxing and Lemme, Max C.},
      title        = {{V}olatile and {N}onvolatile {R}esistive {S}witching in
                      {W}afer-{S}cale {M}o{S}2 {M}emristors},
      address      = {[Piscataway, NJ]},
      publisher    = {IEEE},
      reportid     = {RWTH-2025-09410},
      pages        = {80-81},
      year         = {2025},
      comment      = {2025 Silicon Nanoelectronics Workshop : June 8-9, 2025,
                      Rihga Royal Hotel Kyoto, Kyoto, Japan : workshop abstracts /
                      AP, [the Japan Society of Applied Physics], Electron Devices
                      Society ; general chair: Kuniyuki Kakushima (Institute of
                      Science Tokyo)},
      booktitle     = {2025 Silicon Nanoelectronics Workshop
                       : June 8-9, 2025, Rihga Royal Hotel
                       Kyoto, Kyoto, Japan : workshop
                       abstracts / AP, [the Japan Society of
                       Applied Physics], Electron Devices
                       Society ; general chair: Kuniyuki
                       Kakushima (Institute of Science Tokyo)},
      month         = {Jun},
      date          = {2025-06-08},
      organization  = {2025 Silicon Nanoelectronics Workshop,
                       Kyoto (Japan), 8 Jun 2025 - 9 Jun 2025},
      cin          = {618710 / 612020},
      cid          = {$I:(DE-82)618710_20170609$ / $I:(DE-82)612020_20140620$},
      pnm          = {BMBF 03ZU1106AA - NeuroSys: Memristor Crossbar
                      Architekturen (Projekt A) - A (03ZU1106AA) / BMFTR
                      03ZU2106AA - NeuroSys: KI-anwendungsspezifische
                      Technologiereifung memristiver Bauteile (Projekt A) -
                      Teilvorhaben A (03ZU2106AA) / BMBF 16ME0399 -
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC II - (BMBF-16ME0399) / BMBF 16ME0400 -
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC II - (16ME0400) / ENERGIZE - Energy-efficient
                      Neuromorphic 2D Devices and Circuits for Edge AI Computing
                      (101194458)},
      pid          = {G:(BMBF)03ZU1106AA / G:(BMBF)03ZU2106AA /
                      G:(DE-82)BMBF-16ME0399 / G:(BMBF)16ME0400 /
                      G:(EU-Grant)101194458},
      typ          = {PUB:(DE-HGF)1 / PUB:(DE-HGF)7 / PUB:(DE-HGF)8},
      doi          = {10.23919/SNW65111.2025.11097209},
      url          = {https://publications.rwth-aachen.de/record/1021032},
}