h1

h2

h3

h4

h5
h6
001027963 001__ 1027963
001027963 005__ 20260304080735.0
001027963 037__ $$aRWTH-2026-01358
001027963 041__ $$aEnglish
001027963 1001_ $$0P:(DE-82)IDM04026$$aKopperberg, Nils$$b0$$urwth
001027963 1112_ $$aMemrisys 2025$$cEdinburgh$$d2025-10-13 - 2025-10-16$$wUK
001027963 245__ $$a3D KMC Modelling of Doping Effects on the Reliability of Resistive Switching in VCM ReRAM Devices
001027963 260__ $$c2025
001027963 3367_ $$033$$2EndNote$$aConference Paper
001027963 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1770129234_893487$$xAfter Call
001027963 3367_ $$2BibTeX$$aINPROCEEDINGS
001027963 3367_ $$2DRIVER$$aconferenceObject
001027963 3367_ $$2DataCite$$aOther
001027963 3367_ $$2ORCID$$aLECTURE_SPEECH
001027963 7001_ $$aNoguera, Daniel Genua$$b1
001027963 7001_ $$aMenzel, Stephan$$b2
001027963 8564_ $$uhttps://publications.rwth-aachen.de/record/1027963/files/1027963.pdf$$yRestricted
001027963 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-82)IDM04026$$aRWTH Aachen$$b0$$kRWTH
001027963 9141_ $$y2025
001027963 961__ $$c2026-02-03T15:37:52.183547$$x2026-02-03T15:37:52.183547$$z2026-02-05
001027963 9801_ $$aPublicReference
001027963 980__ $$aI:(DE-82)611610_20140620
001027963 980__ $$aUNRESTRICTED
001027963 980__ $$aUSER
001027963 980__ $$aconf