h1

001028110 001__ 1028110
001028110 005__ 20260309114033.0
001028110 0247_ $$2ISSN$$a2948-1201
001028110 0247_ $$2WOS$$aWOS:001625335000006
001028110 0247_ $$2doi$$a10.1038/s44287-025-00157-7
001028110 037__ $$aRWTH-2026-01461
001028110 041__ $$aEnglish
001028110 1001_ $$00000-0002-2794-2757$$aZhao, Qing-Tai$$b0
001028110 245__ $$aUltra-low-power cryogenic complementary metal oxide semiconductor technology$$honline
001028110 260__ $$a[London]$$bNature Publishing Group UK$$c2025
001028110 3367_ $$00$$2EndNote$$aJournal Article
001028110 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1770330447_54370
001028110 3367_ $$2BibTeX$$aARTICLE
001028110 3367_ $$2DRIVER$$aarticle
001028110 3367_ $$2DataCite$$aOutput Types/Journal article
001028110 3367_ $$2ORCID$$aJOURNAL_ARTICLE
001028110 588__ $$aDataset connected to CrossRef, Journals: publications.rwth-aachen.de
001028110 591__ $$aGermany
001028110 591__ $$aJapan
001028110 591__ $$aSwitzerland
001028110 591__ $$aTaiwan
001028110 7001_ $$aHan, Yi$$b1
001028110 7001_ $$aHan, Hung-Chi$$b2
001028110 7001_ $$aSchreiber, Lars R.$$b3
001028110 7001_ $$aLee, Tsung-En$$b4
001028110 7001_ $$aChiang, Hung-Li$$b5
001028110 7001_ $$aRadu, Iuliana$$b6
001028110 7001_ $$aEnz, Christian$$b7
001028110 7001_ $$00000-0001-6290-9672$$aGrützmacher, Detlev$$b8
001028110 7001_ $$aStampfer, Christoph$$b9
001028110 7001_ $$aTakagi, Shinichi$$b10
001028110 7001_ $$0P:(DE-82)IDM01469$$aKnoch, Joachim$$b11
001028110 773__ $$0PERI:(DE-600)3177793-4$$a10.1038/s44287-025-00157-7$$n4$$p277-290$$tNature reviews / Electrical engineering$$v2$$x2948-1201$$y2025
001028110 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-82)IDM01469$$aRWTH Aachen$$b11$$kRWTH
001028110 9141_ $$y2025
001028110 9151_ $$0StatID:(DE-HGF)0031$$2StatID$$aPeer reviewed article$$x0
001028110 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2025-11-06
001028110 915__ $$0StatID:(DE-HGF)0430$$2StatID$$aNational-Konsortium$$d2025-11-06$$wger
001028110 915__ $$0StatID:(DE-HGF)3003$$2StatID$$aDEAL Nature$$d2025-11-06$$wger
001028110 9201_ $$0I:(DE-82)616210_20140620$$k616210$$lLehrstuhl für Halbleitertechnik und Institut für Halbleitertechnik$$x0
001028110 961__ $$c2026-02-05T23:29:48.777148$$x2026-02-05T23:29:48.777148$$z2026-02-06
001028110 980__ $$aI:(DE-82)616210_20140620
001028110 980__ $$aUNRESTRICTED
001028110 980__ $$aVDBINPRINT
001028110 980__ $$ajournal