Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography

Langheinrich, Wolfram; Muster, Pascal; Reichmann, Felix; Huckemann, Till; Friedrich, Michael; Brackmann, Varvara; Schreiber, Lars R.; Bluhm, Jörg; Bougeard, Dominique; Pregl, Sebastian; Komerički, Nikola; Wislicenus, Marcus

doi:10.1117/12.3063352

%0 Conference Paper
%A Langheinrich, Wolfram
%A Brackmann, Varvara
%A Friedrich, Michael
%A Wislicenus, Marcus
%A Muster, Pascal
%A Pregl, Sebastian
%A Reichmann, Felix
%A Komerički, Nikola
%A Bougeard, Dominique
%A Huckemann, Till
%A Schreiber, Lars R.
%A Bluhm, Jörg
%T Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography
%V 13787
%I SPIE
%M RWTH-2026-03571
%B Proceedings of SPIE
%P 6 Seiten
%D 2025
%< 40th European Mask and Lithography Conference (EMLC 2025) : 16–18 June 2025, Dresden, Germany / Jo Finders, Ines Stolberg Editors ; Organized by VDE/VDI GMM – The Society of Microelectronics, Microsystems, and Precision Engineering (Germany)
%B 40. European Mask and Lithography Conference
%C 16 Jun 2025 - 18 Jun 2025, Dresden (Germany)
Y2 16 Jun 2025 - 18 Jun 2025
M2 Dresden, Germany
%F PUB:(DE-HGF)7 ; PUB:(DE-HGF)8
%9 Contribution to a bookContribution to a conference proceedings
%U <Go to ISI:>//WOS:001697778800014
%R 10.1117/12.3063352
%U https://publications.rwth-aachen.de/record/1032493

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