h1

h2

h3

h4

h5
h6
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png

Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures

; ; ; ; ; ; ; ; ;

In
Applied physics letters 126(25), Seiten/Artikel-Nr.:253504

ImpressumMelville, NY : American Inst. of Physics

Umfang1-5

ISSN1077-3118

Online
DOI: 10.1063/5.0271499

DOI: 10.18154/RWTH-2026-04411
URL: https://publications.rwth-aachen.de/record/1033931/files/1033931.pdf

Einrichtungen

  1. Lehrstuhl für Werkstoffchemie (521110)
  2. Fachgruppe Materialwissenschaft und Werkstofftechnik (520000)


Thematische Einordnung (Klassifikation)
DDC: 530

OpenAccess:
Download fulltext PDF

Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105009273070
WOS Core Collection: WOS:001519074600004

Interne Identnummern
RWTH-2026-04411
Datensatz-ID: 1033931

Beteiligte Länder
Austria, France, Germany, Ireland, Switzerland

Lizenzstatus der Zeitschrift

 GO

Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
QR Code for this record

The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Georesources and Materials Engineering (Fac.5) > Division of Materials Science and Engineering
Publication server / Open Access
Public records
Publications database
520000
521110
 Record created 2026-04-22, last modified 2026-04-23
Similar records


OpenAccess:
Download fulltext PDF
Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)