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HRS Retention of 28 nm BEOL Integrated ReRAM

; ;

In
Shaping the future with innovations in devices and manufacturing : the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025) : Hong Kong, China, 9-12 March 2025 / EDTM - Electron Devices Technology and Manufacturing Conference 2025 ; organized by: IEEE, Electron Devices Society, Seiten/Artikel-Nr: 3 Seiten

Konferenz/Event:9. IEEE Electron Devices Technology & Manufacturing Conference , Hong Kong , Hong Kong , EDTM 2025 , 2025-03-09 - 2025-03-12

Impressum[Piscataway, NJ] : IEEE

Umfang3 Seiten

ISBN979-8-3315-0416-8, 979-8-3315-0417-5

Online
DOI: 10.1109/EDTM61175.2025.11040220


Einrichtungen

  1. Lehrstuhl für Werkstoffe der Elektrotechnik II und Institut für Werkstoffe der Elektrotechnik (611610)



Dokumenttyp
Contribution to a book/Contribution to a conference proceedings

Format
online, print

Sprache
English

Anmerkung
Peer review status of article unknown

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105010827464
WOS Core Collection: WOS:001540468800152

Interne Identnummern
RWTH-2026-04790
Datensatz-ID: 1034962

Beteiligte Länder
Germany

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The record appears in these collections:
Document types > Events > Contributions to a conference proceedings
Document types > Books > Contributions to a book
Faculty of Electrical Engineering and Information Technology (Fac.6)
Public records
Publications database
611610
 Record created 2026-05-05, last modified 2026-05-08
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