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Enhanced resistive switching uniformity in tantalum oxide memristor devices via copper implantation

;

In
Advanced electronic materials

ImpressumWeinheim : Wiley-VCH Verlag GmbH & Co. KG

ISSN2199-160X

First published: 19 April 2026

Online
DOI: 10.1002/aelm.202600002

DOI: 10.18154/RWTH-2026-04795
URL: https://publications.rwth-aachen.de/record/1034971/files/1034971.pdf

Einrichtungen

  1. Lehrstuhl für Werkstoffe der Elektrotechnik II und Institut für Werkstoffe der Elektrotechnik (611610)


Thematische Einordnung (Klassifikation)
DDC: 621.3

OpenAccess:
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Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105036044656
WOS Core Collection: WOS:001743723600001

Interne Identnummern
RWTH-2026-04795
Datensatz-ID: 1034971

Beteiligte Länder
Bulgaria, Germany, Japan, Peoples R China

Lizenzstatus der Zeitschrift

 GO

Medline ; Creative Commons Attribution CC BY 4.0 ; DOAJ ; OpenAccess ; Article Processing Charges ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; DOAJ Seal ; Essential Science Indicators ; Fees ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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Faculty of Electrical Engineering and Information Technology (Fac.6)
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611610
 Record created 2026-05-05, last modified 2026-05-09
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