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TY  - JOUR
AU  - Lauer, V.
AU  - Balk, P.
TI  - Process induced radiation damage in MOS structures
JO  - Microelectronic engineering
VL  - 9
SN  - 0167-9317
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - RWTH-CONV-051559
SP  - 611-614
PY  - 1989
LB  - PUB:(DE-HGF)16
UR  - https://publications.rwth-aachen.de/record/174315
ER  -