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| 001 | 174315 | ||
| 005 | 20170624213307.0 | ||
| 024 | 7 | _ | |2 ISSN |a 0167-9317 |
| 024 | 7 | _ | |2 HSB |a ama8274 |
| 037 | _ | _ | |a RWTH-CONV-051559 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |0 P:(DE-82)065058 |a Lauer, V. |b 0 |e Author |
| 245 | _ | _ | |a Process induced radiation damage in MOS structures |h online, print |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 1989 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |b journal |m journal |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 700 | 1 | _ | |0 P:(DE-82)108534 |a Balk, P. |b 1 |e Author |
| 773 | _ | _ | |0 PERI:(DE-600)1497065-x |p 611-614 |t Microelectronic engineering |v 9 |x 0167-9317 |
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| 915 | 1 | _ | |0 StatID:(DE-HGF)0031 |2 StatID |a Peer reviewed article |
| 920 | 1 | _ | |0 I:(DE-82)ama216_20140620 |k ama216 |l Lehr- und Forschungsgebiet Halbleitertechnologie |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)616210_20140620 |k 616210 |l Lehrstuhl und Institut für Halbleitertechnik |x 1 |
| 970 | _ | _ | |a ama8274 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-82)ama216_20140620 |
| 980 | _ | _ | |a I:(DE-82)616210_20140620 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a ConvertedRecord |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
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