001 | 174318 | ||
005 | 20170624015527.0 | ||
024 | 7 | _ | |2 ISSN |a 0022-0248 |
024 | 7 | _ | |2 HSB |a ama8277 |
037 | _ | _ | |a RWTH-CONV-051562 |
041 | _ | _ | |a English |
100 | 1 | _ | |0 P:(DE-82)114217 |a Leiber, J. |b 0 |e Author |
245 | _ | _ | |a Growth of GaAs and InP on Si using plasma stimulated MOCVD |h online, print |
260 | _ | _ | |a Amsterdam |b North-Holland Publ. Co. |c 1989 |
336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |b journal |m journal |
336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
336 | 7 | _ | |2 BibTeX |a ARTICLE |
336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
336 | 7 | _ | |2 DRIVER |a article |
700 | 1 | _ | |0 P:(DE-82)024344 |a Brauers, A. |b 1 |e Author |
700 | 1 | _ | |0 P:(DE-82)108532 |a Heinecke, H. |b 2 |e Author |
700 | 1 | _ | |0 P:(DE-82)006401 |a Lüth, H. |b 3 |e Author |
700 | 1 | _ | |0 P:(DE-82)108534 |a Balk, P. |b 4 |e Author |
773 | _ | _ | |0 PERI:(DE-600)1466514-1 |p 483-489 |t Journal of crystal growth |v 96 |x 0022-0248 |
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915 | 1 | _ | |0 StatID:(DE-HGF)0031 |2 StatID |a Peer reviewed article |
920 | 1 | _ | |0 I:(DE-82)ama216_20140620 |k ama216 |l Lehr- und Forschungsgebiet Halbleitertechnologie |x 0 |
920 | 1 | _ | |0 I:(DE-82)616210_20140620 |k 616210 |l Lehrstuhl und Institut für Halbleitertechnik |x 1 |
970 | _ | _ | |a ama8277 |
980 | _ | _ | |a journal |
980 | _ | _ | |a I:(DE-82)ama216_20140620 |
980 | _ | _ | |a I:(DE-82)616210_20140620 |
980 | _ | _ | |a VDB |
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