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024 7 _ |2 DOI
|a 10.1166/sam.2014.1938
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024 7 _ |2 ISSN
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037 _ _ |a RWTH-CONV-090246
041 _ _ |a English
100 1 _ |0 P:(DE-82)111081
|a Zhang, W.
|b 0
|e Author
245 _ _ |a Ab Initio Investigation of Crystalline and Amorphous GeTe Doped with Magnetic Impurities
|h online, print
260 _ _ |a Stevenson Ranch, Cal.
|b American Scientific Publ.
|c 2014
336 7 _ |0 0
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|a Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Strukturen, Kinetik und Bauelementskalierung \u201eNanoswitches\u201c (RESIST-SCHALT-20170406)
|c RESIST-SCHALT-20170406
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591 _ _ |a Germany
700 1 _ |0 P:(DE-82)042841
|a Li, Y.
|b 2
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700 1 _ |0 P:(DE-82)150351
|a Ronneberger, I.
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700 1 _ |0 P:(DE-82)IDM00496
|a Mazzarello, Riccardo
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773 _ _ |0 PERI:(DE-600)2604980-6
|a 10.1166/sam.2014.1938
|n 7
|p 1655-1658
|t Science of advanced materials
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914 1 _ |y 2014
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