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%0 Journal Article
%A Knoch, Joachim
%A Müller, M. R.
%T Electrostatic Doping : Controlling the Properties of Carbon-Based FETs With Gates
%J IEEE nanotechnology magazine
%V 13
%N 6
%@ 1536-125X
%C New York, NY
%I IEEE
%M RWTH-CONV-090710
%P 1044-1052
%D 2014
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000345087900005
%R 10.1109/TNANO.2014.2323436
%U https://publications.rwth-aachen.de/record/460548