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@PHDTHESIS{Volk:534468,
      author       = {Volk, Christian},
      othercontributors = {Stampfer, Christoph and Schäpers, Thomas},
      title        = {{S}ingle layer and bilayer graphene quantum dot devices},
      school       = {Aachen, Techn. Hochsch.},
      type         = {Dissertation},
      address      = {Aachen},
      publisher    = {Publikationsserver der RWTH Aachen University},
      reportid     = {RWTH-2015-05087},
      pages        = {VIII, 191 S. : Ill., graph. Darst.},
      year         = {2016},
      note         = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
                      University 2016; Aachen, Techn. Hochsch., Diss., 2015},
      abstract     = {Graphene quantum devices, such as single electron
                      transistors and quantum dots, have been a vital field of
                      research receiving increasing attention over the past six
                      years. Quantum dots (QDs) made from graphene have been
                      suggested to be an interesting system for implementing spin
                      qubits. Compared to the well-established GaAs-based devices
                      their advantages are the smaller hyperfine interaction and
                      spin-orbit coupling promising more favorable spin coherence
                      times. However, while the preparation, manipulation, and
                      read-out of single spins have been demonstrated in GaAs QDs,
                      research on graphene QDs is still at an early stage. So far,
                      effects like Coulomb blockade, electron-hole crossover and
                      spin-states have been studied in graphene QDs.This thesis
                      reports low temperature transport experiments on
                      single-layer and bilayer graphene quantum dot devices
                      focusing on the analysis of excited state spectra and the
                      investigation of the relaxation dynamics of excited states.
                      Graphene nanoribbon based charge sensors are characterized
                      as an important tool to detectindividual charging events in
                      close-by QDs. All devices are fabricated following the
                      concept of width-modulated graphene nanostructures. Carving
                      nanoribbons out of graphene sheets opens an effective band
                      gap and offers the chance to circumvent the limitations
                      originating from the gapless band structure in "bulk"
                      graphene. Shaping graphene into small islands(with typical
                      diameters between 50 and 120 nm) connected to contacts via
                      narrow ribbons (typical widths between 30 and 50 nm) allows
                      the confinement of electrons and the formation of QDs with
                      gate-tunable tunneling barriers.Graphene nanoribbon-based
                      charge detectors coupled to QDs are characterized.They allow
                      the resolution of charging events on the QD even in regimes
                      where the direct current is below the noise floor and
                      excited states of the QD can be resolved by this technique
                      as well. The detector remains operating even in adverse
                      conditions like under the influence of magnetic fields of
                      several Teslas or while RF pulses in the MHz regime are
                      applied to the QD. These findings are in particular relevant
                      for experiments addressing spin states or relaxation
                      processes in graphene QDs. Special emphasis lies on the
                      influence of the detector on the transport properties of the
                      probed QD. The effects of back action and counterflow are
                      measured and discussed.The relaxation dynamics of excited
                      states of graphene QDs is investigated. Finite-bias
                      spectroscopy measurements unveil the excited state spectrum
                      of the device. Long and narrow constrictions are used as
                      tunneling barriers which allow driving the overall tunneling
                      rate to a few MHz. In such a regime rectangular RFpulse
                      schemes are applied to an in-plane gate to probe the
                      relaxation dynamics of excited state to ground state
                      transitions. Measurements of the current averaged over a
                      large number of pulse cycles yield an estimate of a lower
                      bound for charge relaxation times on the order of 60 to 100
                      ns which is roughly a factor of 5 to 10 larger than what has
                      been reported in III/V quantum dots. The experimental
                      results are compared to a basic model regarding
                      electron-phonon coupling as the dominant relaxation
                      mechanism.A bilayer graphene double quantum dot device is
                      characterized. The capacitive interdot coupling can be tuned
                      systematically by a local gate. The electronic excited state
                      spectrum features a single-particle level spacing
                      independent on the number of charge carriers on the QDs
                      which is in contrast to single-layer graphene.In in-plane
                      magnetic fields a level splitting of the order of Zeeman
                      splittings is observed.},
      cin          = {132110 / 130000},
      ddc          = {530},
      cid          = {$I:(DE-82)132110_20140620$ / $I:(DE-82)130000_20140620$},
      typ          = {PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:hbz:82-rwth-2015-050871},
      url          = {https://publications.rwth-aachen.de/record/534468},
}