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| 024 | 7 | _ | |2 doi |a 10.1002/aelm.201500240 |
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| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 621.3 |
| 100 | 1 | _ | |0 P:(DE-82)192136 |a Xu, Ming |b 0 |e Corresponding author |
| 245 | _ | _ | |a Reversing the Resistivity Contrast in the Phase-Change Memory Material GeSb 2 Te 4 Using High Pressure |h online |
| 260 | _ | _ | |a Chichester |b Wiley |c 2015 |
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| 591 | _ | _ | |a Peoples R China |
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| 700 | 1 | _ | |a Yu, Zhenhai |b 1 |
| 700 | 1 | _ | |a Wang, Lin |b 2 |
| 700 | 1 | _ | |0 P:(DE-82)IDM00496 |a Mazzarello, Riccardo |b 3 |
| 700 | 1 | _ | |0 P:(DE-82)IDM00089 |a Wuttig, Matthias |b 4 |
| 773 | _ | _ | |0 PERI:(DE-600)2810904-1 |a 10.1002/aelm.201500240 |n 12 |t Advanced Electronic Materials |v 1 |x 2199-160X |y 2015 |
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