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000565086 1001_ $$0P:(DE-82)150351$$aRonneberger, Ider$$b0
000565086 245__ $$aCrystallization Properties of the Ge 2 Sb 2 Te 5 Phase-Change Compound from Advanced Simulations$$honline, print
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000565086 536__ $$0G:(GEPRIS)167917811$$aResistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Strukturen, Kinetik und Bauelementskalierung \u201eNanoswitches\u201c (RESIST-SCHALT-20170406)$$cRESIST-SCHALT-20170406$$x0
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000565086 7001_ $$0P:(DE-82)095992$$aZhang, Wei$$b1
000565086 7001_ $$aEshet, Hagai$$b2
000565086 7001_ $$0P:(DE-82)IDM00496$$aMazzarello, Riccardo$$b3$$eCorresponding author
000565086 773__ $$0PERI:(DE-600)2039420-2$$a10.1002/adfm.201500849$$n40$$p6407-6413$$tAdvanced functional materials$$v25$$x1616-301X$$y2015
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