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245 _ _ |a Crystallization Properties of the Ge 2 Sb 2 Te 5 Phase-Change Compound from Advanced Simulations
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|a Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Strukturen, Kinetik und Bauelementskalierung \u201eNanoswitches\u201c (RESIST-SCHALT-20170406)
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591 _ _ |a Israel
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700 1 _ |a Eshet, Hagai
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700 1 _ |0 P:(DE-82)IDM00496
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