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@PHDTHESIS{Knoch:56637,
      author       = {Knoch, Joachim},
      othercontributors = {Lengeler, Bruno},
      title        = {{M}odeling and realization of an ultra-short channel
                      {MOSFET}},
      address      = {Aachen},
      publisher    = {Publikationsserver der RWTH Aachen University},
      reportid     = {RWTH-CONV-118726},
      pages        = {105 S. : Ill., graph. Darst.},
      year         = {2001},
      note         = {Aachen, Techn. Hochsch., Diss., 2001},
      abstract     = {The ever increasing demand for higher speed and performance
                      of microelectronic circuits has lead to a continuous
                      decrease in today's semiconductor devices. In particular,
                      the invention of the metal-oxide-semiconductor field-effect
                      transistor (MOSFET) has made the enormous miniaturization of
                      integrated circuits possible. The answer to the question of
                      how far this miniaturization can be driven is up to now not
                      quite clear. The present thesis introduces a novel scheme
                      for the fabrication of MOSFETs with channel lengths down to
                      10nm. The approach relies on a single-gated layout on
                      thin-body silicon-on-insulator material. Devices with 36nm
                      channel length have been fabricated successfully which show
                      state-of-the-art electrical characteristics. In addition,
                      the behavior of such ultra-short channel MOSFETs has been
                      investigated theoretically. A fully quantum mechanical
                      simulation tool has been developed making use of the
                      non-equilibrium Green's function formalism. It is shown
                      that, in principle, a scaling of the single-gated MOSFET on
                      SOI is possible down to 10nm channel length while still
                      yielding acceptable electrical characteristics.},
      cin          = {100000},
      ddc          = {530},
      cid          = {$I:(DE-82)100000_20140620$},
      typ          = {PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:hbz:82-opus-2133},
      url          = {https://publications.rwth-aachen.de/record/56637},
}