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|a Jost, Peter Christian Georg
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245 _ _ |a Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe–Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe
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260 _ _ |a Weinheim
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|a Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Strukturen, Kinetik und Bauelementskalierung \u201eNanoswitches\u201c (RESIST-SCHALT-20170406)
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700 1 _ |0 P:(DE-82)567309
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770 _ _ |a Special Issue: Resistively Switching Chalcogenides
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