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@PHDTHESIS{Sulzberger:58972,
author = {Sulzberger, Markus},
othercontributors = {Voigtländer, Bert},
title = {{W}achstum von dreidimensionalen {G}ermaniuminseln auf
unverspannten und verspannten
{S}ilizium(001)-{O}berflächen},
address = {Aachen},
publisher = {Publikationsserver der RWTH Aachen University},
reportid = {RWTH-CONV-120794},
pages = {III, 163 S. : Ill., graph. Darst.},
year = {2003},
note = {Aachen, Techn. Hochsch., Diss., 2003},
abstract = {This thesis is dedicated to the scanning tunneling
microscopical investigation of the influence of strain and
relaxation on the epitaxial growth of germanium on
conventional silicon substrates, as well as on
silicon-germanium substrates covered by a strained silicon
layer. With respect to a possible application e.g. as
quantum dots, it is desirable to achieve a high density of
spatially ordered, small islands, with uniform shape and
orientation. This requirements could be met by suitable
choice of the epitxial parameter during growth of germanium
on conventional silicon (001)-substrates, except for the
spatial ordering. The lattice misfit has a fundamental
influence on the nucleation of germanium on silicon
surfaces. Therefore it has been investigated, if it is
possible to achieve a spatial arrangement of islands due to
the variation of the surface lattice constant.
Silicon-germanium substrates have an adjustable spatial
variation of the lattice constant and dislocation density.
Each dislocation is connected with a strain field that
results in a variation of the lattice constant and a slip
step at the surface. Up to now it was in question where the
nucleation of germanium islands takes place. Does the
nucleation take place at the slip-steps due to the
dislocations or at the positions where the silicon cap layer
is strained due to the underlying dislocation network? It
could be proved that the only reason for the spatial
ordering of the islands is the variation of the strain in
the growth area. The islands nucleate at the positions,
where the lattice constant of the strained silicon cap layer
is similar to the natural lattice constant of germanium. An
influence of dislocation slip-steps could be excluded. To
find out which processes dominate growth process and
ripening, temper experiments have been used, to investigate
how shape, size and spatial ordering develop in dependence
to the duration of the temper process. In summary it might
be said, that the selforganized growth of germanium islands
is a suitable process to achieve spatially ordered
nanostructures, with well defined size, shape and adjustable
distances and density.},
keywords = {Silicium (SWD) / Kristallfläche (SWD) / Germanium (SWD) /
Inselschicht (SWD) / Heteroepitaxie (SWD)},
cin = {100000},
ddc = {530},
cid = {$I:(DE-82)100000_20140620$},
typ = {PUB:(DE-HGF)11},
urn = {urn:nbn:de:hbz:82-opus-6303},
url = {https://publications.rwth-aachen.de/record/58972},
}
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