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@PHDTHESIS{Foltyski:672605,
      author       = {Foltyński, Bartosz},
      othercontributors = {Heuken, Michael and Mokwa, Wilfried},
      title        = {{MOVPE} growth and characterization of {G}a{N}/{I}n{G}a{N}
                      nanowires and microrods for next generation
                      solid-state-lighting applications},
      school       = {Rheinisch-Westfälische Technische Hochschule Aachen},
      type         = {Dissertation},
      address      = {Aachen},
      reportid     = {RWTH-2016-08172},
      pages        = {1 Online-Ressource (II,112 Seiten) : Illustrationen,
                      Diagramme},
      year         = {2016},
      note         = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
                      University; Dissertation, Rheinisch-Westfälische Technische
                      Hochschule Aachen, 2016},
      abstract     = {A comprehensive study has been conducted in order to
                      develop, understand and define the epitaxial growth process
                      of InGaN/GaN nanowires (NW) and qualify their properties for
                      application in future nanoLED devices. Vapor-liquid-solid
                      (VLS) growth mode, selective area growth (SAG) and
                      self-organized growth were investigated as three different
                      approaches to create GaN rod structures. All of the grown
                      samples were characterized by means of different
                      complementary non-destructive techniques to analyze
                      electrical and optical properties. In particular the QW
                      emission was studied by microphotoluminescence (µPL), the
                      crystal quality and strain through Raman scattering and the
                      crystal structure by transmission electron microscopy (TEM).
                      Some of the developed NWs were analyzed using advanced
                      measurement set-up, in particular: nano-scale
                      cathodoluminescence (CL) mapping or synchrotron-based
                      characterization, including hard X-ray nanoprobe and X-ray
                      fluorescence (XRF). The complex characterization allowed to
                      understand the optical and structural properties of grown
                      nanostructures and therefore helped to improve the growth
                      process. Based on the obtained results, the development of
                      selective area growth of GaN microrods on Si(111) substrates
                      by MOCVD is discussed together with characterization and
                      understanding of structural and optical properties of
                      individual GaN rods. Additionally, the novel, innovative
                      self-organized growth of GaN NWs on Si(111) is proposed as
                      an alternative to the time consuming and expensive SAG
                      method. The nano-scale characterization and understanding of
                      structural and optical properties of newly developed
                      InGaN/GaN NWs on silicon substrate are discussed providing
                      the description of the current status of GaN NW on Si growth
                      and the role of GaN rod on Si as the building block for the
                      nanoLED.},
      cin          = {612020},
      ddc          = {621.3},
      cid          = {$I:(DE-82)612020_20140620$},
      typ          = {PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:hbz:82-rwth-2016-081720},
      url          = {https://publications.rwth-aachen.de/record/672605},
}