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@PHDTHESIS{Kim:686391,
      author       = {Kim, Hyun-su},
      othercontributors = {Juschkin, Larissa and Taubner, Thomas Günter},
      title        = {{I}nterference lithography with extreme ultraviolet light},
      school       = {RWTH Aachen University und University of Southampton},
      type         = {Dissertation},
      address      = {Aachen},
      reportid     = {RWTH-2017-02814},
      pages        = {1 Online-Ressource (149 Seiten) : Illustrationen,
                      Diagramme},
      year         = {2016},
      note         = {Cotutelle-Dissertation. - Veröffentlicht auf dem
                      Publikationsserver der RWTH Aachen University 2017;
                      Dissertation, RWTH Aachen University und University of
                      Southampton, 2016},
      abstract     = {In photolithography, increasing pattern density is a key
                      issue for development ofsemiconductor devices. Extreme
                      ultraviolet (EUV) radiation is the next generationlight
                      source for overcoming the resolution limit of conventional
                      photolithographyin order to obtain nanostructures of higher
                      density. In this thesis, we focus oninvestigating resolution
                      limits of interference patterns produced by EUV
                      radiation.Optical properties of interference fringes
                      obtained using different types ofcompact EUV sources are
                      studied with regard to increasing pattern density.Rigorous
                      simulations of optical wave propagation of EUV radiation are
                      performedto investigate the resolution limits of
                      interference fringes for the fractional Talboteffect, the
                      achromatic Talbot effect, and an image of Talbot carpet that
                      has anoptical property of ever-decreasing size of
                      interference fringes. In experiments,interference
                      lithography has been performed with three different types of
                      compactEUV sources including a gas discharge produced
                      plasma, a plasma based EUVlaser, and a high-harmonic
                      generation source. We analyze optical characteristics
                      ofparticular EUV sources resulting in different capabilities
                      of patterning. Alsodifferent optical system designs capable
                      of overcoming the limitations of opticalproperties of EUV
                      radiation are investigated. We expect that the study of
                      EUVinterference lithography can be helpful for understanding
                      the upcomingphotolithography resolution and also can be
                      useful as a technology for fabricatingvery fine structures.},
      cin          = {130000 / 139420},
      ddc          = {530},
      cid          = {$I:(DE-82)130000_20140620$ / $I:(DE-82)139420_20140620$},
      typ          = {PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:hbz:82-rwth-2017-028144},
      doi          = {10.18154/RWTH-2017-02814},
      url          = {https://publications.rwth-aachen.de/record/686391},
}