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@ARTICLE{Chen:688566,
      author       = {Chen, C. and Jost, Peter Christian Georg and Volker, H. and
                      Kaminski, M. and Wirtssohn, Matti and Engelmann, U. and
                      Krüger, K. and Schlich, Franziska and Schlockermann, C. and
                      Lobo, R. P. S. M. and Wuttig, Matthias},
      title        = {{D}ielectric properties of amorphous phase-change
                      materials},
      journal      = {Physical review / B},
      volume       = {95},
      number       = {9},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {The American Institute of Physics},
      reportid     = {RWTH-2017-03888},
      pages        = {094111},
      year         = {2017},
      cin          = {131110 / 080044 / 080009 / 130000},
      ddc          = {530},
      cid          = {$I:(DE-82)131110_20140620$ / $I:(DE-82)080044_20160218$ /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)130000_20140620$},
      pnm          = {Resistiv schaltende Chalkogenide für zukünftige
                      Elektronikanwendungen: Strukturen, Kinetik und
                      Bauelementskalierung $\u201eNanoswitches\u201c$
                      (RESIST-SCHALT-20170406)},
      pid          = {G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000396271400002},
      doi          = {10.1103/PhysRevB.95.094111},
      url          = {https://publications.rwth-aachen.de/record/688566},
}