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%0 Thesis
%A von den Driesch, Nils
%T Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
%V 163
%I RWTH Aachen University
%V Dissertation
%C Jülich
%M RWTH-2018-221225
%B Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien/key technologies
%P 1 Online-Ressource (viii, 149 Seiten) : Illustrationen, Diagramme
%D 2018
%Z Druckausgabe: 2018. - Onlineausgabe: 2018. - Auch veröffentlicht auf dem Publikationsserver der RWTH Aachen University
%Z Dissertation, RWTH Aachen University, 2018
%X Over the last decades, silicon-based integrated circuits underpinned information technology. To keep up with the demand for faster and, becoming increasingly more relevant nowadays, energy-efficient electronics, smart solutions targeting power consumption are required. Integration of photonic components, e.g. for replacing part of copper interconnects, could strongly reduce on-chip dissipation. Prerequisite for efficient active optoelectronic devices, however not available in group IV elements, is a direct bandgap. Only recently though, a truly silicon-compatible solution was demonstrated by tin-based group IV GeSn alloys, which offer a direct bandgap for a cubic lattice and Sn concentrations above 9 at.
%F PUB:(DE-HGF)11 ; PUB:(DE-HGF)3
%9 Dissertation / PhD ThesisBook
%R 10.18154/RWTH-2018-221225
%U https://publications.rwth-aachen.de/record/717204