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TY  - THES
AU  - von den Driesch, Nils
TI  - Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters
VL  - 163
PB  - RWTH Aachen University
VL  - Dissertation
CY  - Jülich
M1  - RWTH-2018-221225
T2  - Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien/key technologies
SP  - 1 Online-Ressource (viii, 149 Seiten) : Illustrationen, Diagramme
PY  - 2018
N1  - Druckausgabe: 2018. - Onlineausgabe: 2018. - Auch veröffentlicht auf dem Publikationsserver der RWTH Aachen University
N1  - Dissertation, RWTH Aachen University, 2018
AB  - Over the last decades, silicon-based integrated circuits underpinned information technology. To keep up with the demand for faster and, becoming increasingly more relevant nowadays, energy-efficient electronics, smart solutions targeting power consumption are required. Integration of photonic components, e.g. for replacing part of copper interconnects, could strongly reduce on-chip dissipation. Prerequisite for efficient active optoelectronic devices, however not available in group IV elements, is a direct bandgap. Only recently though, a truly silicon-compatible solution was demonstrated by tin-based group IV GeSn alloys, which offer a direct bandgap for a cubic lattice and Sn concentrations above 9 at.
LB  - PUB:(DE-HGF)11 ; PUB:(DE-HGF)3
DO  - DOI:10.18154/RWTH-2018-221225
UR  - https://publications.rwth-aachen.de/record/717204
ER  -