h1

% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@PHDTHESIS{Elsayed:764289,
      author       = {Elsayed, Mohamed},
      othercontributors = {Negra, Renato and Lemme, Max Christian},
      title        = {{T}hin-film technology for graphene-based electronic
                      devices and circuits},
      school       = {Rheinisch-Westfälische Technische Hochschule Aachen},
      type         = {Dissertation},
      address      = {Aachen},
      reportid     = {RWTH-2019-06745},
      pages        = {1 Online-Ressource (xii, Aii, 154 Seiten) : Illustrationen,
                      Diagramme},
      year         = {2019},
      note         = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
                      University; Dissertation, Rheinisch-Westfälische Technische
                      Hochschule Aachen, 2019},
      abstract     = {This dissertation summarizes my research in graphene-based
                      technology, devices and circuits within the Graphene
                      Flagship project funded by the European Commission. The
                      kick-off of the project was in October 2013 after only nine
                      years from the rise of graphene in 2004 as a promising 2D
                      material. In 2013, the status of graphene-based devices was
                      beyond the expectations from the electrical features of
                      graphene. The zero-bandgap nature of the intrinsic graphene
                      leads to challenges in fabricating graphene field-effect
                      transistors (GFET)s which can be employed in conventional
                      circuits like other semiconductor devices. One of these
                      challenges is the poor maximum frequency of oscillations
                      (fmax) which is poor compared to the expected from the
                      charge carrier mobilities. In addition, the poor on-off
                      currents ratio imposes challenges to employ GFETs in Boolean
                      logic gates and thus in digital circuits. This work
                      addresses these challenges by expressing the roadmap of the
                      evolution of GFETs and the employment of these transistors
                      in circuits and systems. Thenceforth, a novel graphene-based
                      device which is the chemical vapor deposition (CVD)
                      metal-insulator-graphene (MIG) diode is presented. The MIG
                      diode is the core contribution of this work by leveraging an
                      interesting feature of graphene which is the graphene
                      quantum capacitance (GCQ). The novel device which uses a
                      similar structure of the thin-film metal-insulator-metal
                      (MIM) diodes but with a distinct charge transfer mechanism
                      allows the implementation of thin-film technology that is
                      employed in high frequency circuit applications. Physical
                      operation of the diode is studied and compared to
                      state-of-the-art MIM diodes showing superior performance
                      in-terms of asymmetry and nonlinearity. Large- and
                      small-signal models are extracted from the characterisation
                      of the fabricated diodes to enable the use of these diodes
                      in circuit applications. In addition, physical design
                      considerations are carried out to ensure high frequency
                      operation of these diodes. An in-house, thin-film monolithic
                      microwave integrated circuit (MMIC) technology integrating
                      MIG diodes together with high quality passives is presented
                      and tested. Different integrated circuits employing the MIG
                      diodes such as power detectors and mixers are implemented at
                      micro and millimetre-wave frequencies. In addition,
                      thin-film Boolean logic gates are presented thanks to the
                      excellent switching properties of MIG diodes. Another
                      attainment of this work is leveraging MIG diodes in six-port
                      topologies which offer a solution to build receivers at
                      different frequency bands of operation. In that regard, a
                      lumped-element six-port junction is implemented on a glass
                      substrate. Owing to the stable MMIC process together with
                      the repeatability of the CVD MIG diodes successful receiver
                      operation is demonstrated. Last but not least, the
                      employment of the unique properties of the GCQ in parametric
                      amplifier (PAMP) topology to realise canonical transmitter
                      and receiver frontends with positive conversion gain is
                      explored and discussed for the first time.},
      cin          = {618510},
      ddc          = {621.3},
      cid          = {$I:(DE-82)618510_20140620$},
      typ          = {PUB:(DE-HGF)11},
      doi          = {10.18154/RWTH-2019-06745},
      url          = {https://publications.rwth-aachen.de/record/764289},
}