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@PHDTHESIS{Holly:767328,
author = {Holly, Carlo},
othercontributors = {Poprawe, Reinhart and Tränkle, Günther},
title = {{M}odeling of the lateral emission characteristics of
high-power edge-emitting semiconductor lasers; 1. {A}uflage},
school = {RWTH Aachen University},
type = {Dissertation},
address = {Düren},
publisher = {Shaker},
reportid = {RWTH-2019-08745},
isbn = {978-3-8440-6923-5},
series = {Lasertechnik},
pages = {263 Seiten : Illustrationen, Diagramme},
year = {2019},
note = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
University; Dissertation, RWTH Aachen University, 2019},
abstract = {In this work, numerical methods for the simulation of
broad-area edge-emitting semicon- ductor lasers are
presented. Frequency-domain and time-domain models are
employed to predict the propagation of the filamented
optical field in the semiconductor laser and determine
emission characteristics including near-field and far-field
profiles, beam width, divergence angle, and power over
current. The models utilize wave-optical beam propagation
and account for the interaction of the optical field with
the spatial (and temporal) varying carrier and temperature
distributions inside the semiconductor laser cavity. Once
calibrated, the frequency-domain model is utilized to
predict emission characteristics of single emitters and
laser arrays, which differ in geometrical properties
(contact width, cavity length or emitter pitch), epitaxial
structure or facet reflectivity. By comparison with
experimental data for eight laser designs, which include
single- emitter and laser arrays it is demonstrated that the
frequency-domain model allows computation of lateral
far-field angles and near-field widths as a function of
current and thermal state for edge-emitting diode lasers. An
opto-mechanical model is derived to compute the degree of
polarization for pack- aged single emitter or laser arrays.
The mechanical strains, induced by the soldering process,
heating of the device during operation and intrinsic lattice
mismatch in the device, are considered. The ratio of the
shear strain and the lateral (and vertical) strain
component(s) determines the degree of polarization. In
addition to the frequency-domain model, a time-domain model
based on the traveling- wave method is implemented and
employed to compute the optical propagation in the QW-plane
of an edge-emitting diode laser, including carrier- and
temperature-induced refractive index changes. The evolution
of the optical field along the cavity is computed
iteratively for transverse slices. Alongside with the
optical propagation, the carrier diffusion equation and an
auxiliary equation for the material polarization are solved.
The results obtained with the time-domain model obey similar
filamented field profiles like the ones obtained with the
frequency-domain model. In summary, the numerical model acts
as a digital-twin of the real device and with the simulation
tools presented in this work the lateral emission
characteristics for edge- emitting laser devices can be
predicted to the extent needed to make design decisions.},
cin = {418710},
ddc = {620},
cid = {$I:(DE-82)418710_20140620$},
typ = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
doi = {10.18154/RWTH-2019-08745},
url = {https://publications.rwth-aachen.de/record/767328},
}
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