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000825162 001__ 825162
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000825162 0247_ $$2doi$$a10.1109/DRC52342.2021.9467236
000825162 037__ $$aRWTH-2021-08099
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000825162 1001_ $$0P:(DE-82)825226$$aPiacentini, Agata$$b0$$eCorresponding author$$urwth
000825162 1112_ $$a79. Device Research Conference$$conline$$d2021-06-20 - 2021-06-23$$gDRC 2021
000825162 245__ $$aLow Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation$$honline
000825162 260__ $$a[Piscataway, NJ]$$bIEEE$$c2021
000825162 260__ $$c2022
000825162 29510 $$a2021 Device Research Conference (DRC) : 20-23 June 2021
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000825162 536__ $$0G:(GEPRIS)407080863$$aScalable MoS2 based flexible devices and circuits for wireless communications / Skalierbare MoS2-basierte flexible Bauelemente und Schaltkreise für drahtlose Kommunikation (407080863)$$c407080863$$x4
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000825162 7001_ $$0P:(DE-82)572279$$aSchneider, Daniel$$b1$$urwth
000825162 7001_ $$aOtto, Martin$$b2
000825162 7001_ $$aCanto, Barbara$$b3
000825162 7001_ $$aWang, Zhenyu$$b4
000825162 7001_ $$aRadenovic, Aleksandra$$b5
000825162 7001_ $$aKis, Andras$$b6
000825162 7001_ $$0P:(DE-82)IDM02304$$aLemme, Max C.$$b7$$urwth
000825162 7001_ $$aNeumaier, Daniel$$b8
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