Zero‐Bias Power‐Detector Circuits based on MoS$_{2}$ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Reato, Eros; Uzlu, Burkay; Grundmann, Annika Olivia; Palacios, Paula; Negra, Renato; Heuken, Michael; Schneider, Daniel S.; Wang, Zhenxing; Kalisch, Holger; Saeed, Mohamed; Neumaier, Daniel; Lemme, Max C.; Vescan, Andrei; Wang, Zhenyu; Radenovic, Alexandra; Kis, Andras

doi:0935-9648

%0 Journal Article
%A Reato, Eros
%A Palacios, Paula
%A Uzlu, Burkay
%A Saeed, Mohamed
%A Grundmann, Annika Olivia
%A Wang, Zhenyu
%A Schneider, Daniel S.
%A Wang, Zhenxing
%A Heuken, Michael
%A Kalisch, Holger
%A Vescan, Andrei
%A Radenovic, Alexandra
%A Kis, Andras
%A Neumaier, Daniel
%A Negra, Renato
%A Lemme, Max C.
%T Zero‐Bias Power‐Detector Circuits based on MoS<sub>2</sub> Field‐Effect Transistors on Wafer‐Scale Flexible Substrates
%J Advanced materials
%@ 0935-9648
%C Weinheim
%I Wiley-VCH
%M RWTH-2022-02071
%P 2108469
%D 2022
%Z First published: 24 January 2022
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000756585400001
%R 10.1002/adma.202108469
%U https://publications.rwth-aachen.de/record/841921

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