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001     841921
005     20230512100149.0
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|a 10.18154/RWTH-2022-02071
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|a 10.1002/adma.202108469
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245 _ _ |a Zero‐Bias Power‐Detector Circuits based on MoS$_{2}$ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates
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500 _ _ |a First published: 24 January 2022
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|a BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399)
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536 _ _ |0 G:(GEPRIS)407080863
|a Scalable MoS2 based flexible devices and circuits for wireless communications / Skalierbare MoS2-basierte flexible Bauelemente und Schaltkreise für drahtlose Kommunikation (407080863)
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|a ULTIMOS2 - Ultimatives Skalierungs- und Leistungspotential von MoS2 Feldeffekttransistoren (412113712)
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700 1 _ |a Wang, Zhenyu
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|a Wang, Zhenxing
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