TY - THES AU - Singh, Aryak TI - Laser processing for interdigitated back-contacted silicon heterojunction solar cells PB - Rheinisch-Westfälische Technische Hochschule Aachen VL - Dissertation CY - Aachen M1 - RWTH-2022-09441 SP - 1 Online-Ressource : Illustrationen, Diagramme PY - 2021 N1 - Veröffentlicht auf dem Publikationsserver der RWTH Aachen University 2022 N1 - Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021 AB - The current state-of-the-art industrial solar modules are based on either Aluminum Back-Surface Field (Al-BSF) or Passivated Emitter and Rear Contact (PERC) solar cell technologies. These inherently suffer from relatively low efficiency values due to the presence of direct metal-silicon contact in their design- which induces a high density of electronically active defects in the band-gap of silicon. In recent years, this issue has been tackled by the application of passivated contacts - contacts that feature with an ultra-thin a-Si:H (i) or SiO2 film between the metal and silicon to electronically separate them. This film, besides allowing the transport of charge carriers across the contact interface, also acts as a passivation layer by passivating the dangling bonds on the surface of the silicon wafer. Devices that use a-Si:H (i) film as the passivated contact are referred to as silicon heterojunction solar cells (SHJ). Silicon Heterojunction solar cells, in double-side contacted architecture, in addition to promising higher efficiencies than the current industrial solar cells, have a simpler processing sequence than the state-of-the-art industrial PERC technology, and modules based on these solar cells, have already entered production in recent times. Although multiple groups have reported high efficiency results with SHJ solar cells, nonetheless, the double-side configuration limits the fullest potential of this technology due to parasitic absorption and reflective losses- that occur in the doped layers and metal fingers- on the front side of the device. These losses can effectively be mitigated by placing both the contacts on the back-side, in the form of interdigitated fingers. Using such an architecture, in 2017, Kaneka report the world record efficiency of >26 LB - PUB:(DE-HGF)11 DO - DOI:10.18154/RWTH-2022-09441 UR - https://publications.rwth-aachen.de/record/854287 ER -