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@PHDTHESIS{Johnsen:860526,
      author       = {Johnsen, Tjorven},
      othercontributors = {Morgenstern, Markus and Libisch, Florian},
      title        = {{I}nterplay of quantum {H}all edge states in graphene with
                      the tip-induced quantum dot and graphene sample fabrication
                      techniques for advanced scanning tunneling microscopy},
      school       = {RWTH Aachen University},
      type         = {Dissertation},
      address      = {Aachen},
      publisher    = {RWTH Aachen University},
      reportid     = {RWTH-2022-11449},
      pages        = {1 Online-Ressource : Illustrationen, Diagramme},
      year         = {2022},
      note         = {Veröffentlicht auf dem Publikationsserver der RWTH Aachen
                      University 2023; Dissertation, RWTH Aachen University, 2022},
      abstract     = {The quantum Hall effect (QHE) is in large portion
                      rationalized by the edge channel (EC) picture in which the
                      charge transport takes place in stripe like channels along
                      the edge of the sample. For the adequate parameters, ECs can
                      run along a pn interface instead of the physical edge of the
                      sample. Using such a gate-defined pn interface in graphene,
                      compressible stripes that combined with incompressible
                      stripes constitute the ECs are studied within this thesis by
                      scanning tunneling microscopy (STM) and spectroscopy (STS).
                      To this end, the Landau level (LL) features are investigated
                      a tan interface of different filling factors for varying
                      gate voltages. Charging lines (CLs) emerging in the
                      measurements reveal that a tip-induced quantum dot (QD)
                      develops below the STM tip. Poisson simulations of the
                      experimental setting involving the tip, the graphene layer,
                      and the electrostatic interface are conducted with the
                      purpose to disentangle the contributions of tip and
                      interface on the ECs. Together with tight binding (TB)
                      calculations on the basis of the Poisson simulations, all
                      experimental features are well understood establishing a
                      useful method for the investigation of ECs. Flat plateaus of
                      constant LL energy and about 40nm width close to the pn
                      interface indicate electrostatic reconstruction of the ECs
                      into compressible and incompressible stripes due to
                      screening. Besides branches of LL features evolve at the pn
                      interface interconnecting neighbouring LLs. Their
                      explanation depends on the choice of sample and back gate
                      voltage. If a QD is below the tip, its position with respect
                      to the tip gets shifted at the pn interface whereby states
                      at a different position within the QD are probed by the tip.
                      These states are at different orbital energies within the
                      QD. Their successive measurement leads to the observed LL
                      branches. If in contrast no QD exits below the tip, the wave
                      function of the compressible stripe is directly probed. Its
                      position and width are influenced by the tip but without
                      altering the structure of the wave function significantly.
                      This enables to map the wave function of compressible
                      stripes of several LLs for a specific choice of parameters.
                      Likely, the structure of the compressible stripe wave
                      function also reflects a lateral shift of the two sublattice
                      components at the interface. Furthermore, various processes
                      to fabricate graphene samples for combined electrical
                      transport and STM investigations are described. Two of them
                      are novelly conceived and integrate a graphite back gate
                      into the sample structure. A third process employs a
                      standard dry stacking technique followed by evaporating
                      contacts through a shadow mask. A sample prepared by this
                      method is characterized both by STM and transport
                      measurements displaying interaction induced symmetry
                      breaking of the LLs and the fractional 1/3 quantum Hall
                      state yet only in transport. A different sample prepared by
                      one of the novel methods has little improved quality and a
                      similar outcome of symmetry broken states in transport
                      measurements. Linking the STM experiments and sample
                      fabrication processes, two procedures to locate a STM tip on
                      a micron-sized graphene sample are presented and both
                      successfully carried out. The first one relies on the
                      optical alignment of tip and sample by means of a long
                      distance microscope. In the second procedure the spatially
                      varying and externally tunable electrostatic force between
                      tip and sample measured by a tuning fork sensor guides the
                      tip to the sample.},
      cin          = {132310 / 130000},
      ddc          = {530},
      cid          = {$I:(DE-82)132310_20140620$ / $I:(DE-82)130000_20140620$},
      typ          = {PUB:(DE-HGF)11},
      doi          = {10.18154/RWTH-2022-11449},
      url          = {https://publications.rwth-aachen.de/record/860526},
}