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000973902 001__ 973902
000973902 005__ 20240510105127.0
000973902 0247_ $$2ISBN$$a978-4-86348-803-8
000973902 0247_ $$2ISBN$$a979-8-3503-1368-0
000973902 0247_ $$2ISBN$$a9798350313680
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000973902 0247_ $$2doi$$a10.23919/SISPAD57422.2023.10319613
000973902 037__ $$aRWTH-2023-11069
000973902 041__ $$aEnglish
000973902 1001_ $$0P:(DE-82)975175$$aRenner, Max$$b0$$urwth
000973902 1112_ $$aInternational Conference on Simulation of Semiconductor Processes and Devices$$cKobe$$d2023-09-27 - 2023-09-29$$gSISPAD 2023$$wJapan
000973902 245__ $$aAn Accurate k*p Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs$$honline, print
000973902 260__ $$a[Piscataway, NJ]$$bIEEE$$c2023
000973902 29510 $$a2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : SISPAD 2023 : September 27-29, 2023, Kobe Chamber of Commerce and Industry, Kobe, Japan / conference chair: S. Souma (Kobe Univ.) ; publication: Y. Kamakura (Osaka Inst. Technol.)
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000973902 591__ $$aGermany
000973902 7001_ $$0P:(DE-82)IDM03811$$aLinn, Tobias Sebastian$$b1$$urwth
000973902 7001_ $$0P:(DE-82)IDM00803$$aJungemann, Christoph$$b2$$urwth
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000973902 9141_ $$y2023
000973902 9151_ $$0StatID:(DE-HGF)0031$$2StatID$$aPeer reviewed article$$x0
000973902 9201_ $$0I:(DE-82)611410_20140620$$k611410$$lLehrstuhl und Institut für Theoretische Elektrotechnik$$x0
000973902 961__ $$c2023-11-28T08:33:23.105893$$x2023-11-28T08:33:23.105893$$z2023-11-28
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