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%0 Journal Article
%A Jungemann, Christoph
%A Richstein, Benjamin
%A Linn, Tobias Sebastian
%A Knoch, Joachim
%T Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
%J IEEE transactions on electron devices : ED
%V 71
%N 4
%@ 1557-9646
%C New York, NY
%I IEEE
%M RWTH-2024-03813
%P 2322-2328
%D 2024
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:001203479800002
%R 10.1109/TED.2024.3361410
%U https://publications.rwth-aachen.de/record/984026