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TY  - JOUR
AU  - Jungemann, Christoph
AU  - Richstein, Benjamin
AU  - Linn, Tobias Sebastian
AU  - Knoch, Joachim
TI  - Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
JO  - IEEE transactions on electron devices : ED
VL  - 71
IS  - 4
SN  - 1557-9646
CY  - New York, NY
PB  - IEEE
M1  - RWTH-2024-03813
SP  - 2322-2328
PY  - 2024
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001203479800002
DO  - DOI:10.1109/TED.2024.3361410
UR  - https://publications.rwth-aachen.de/record/984026
ER  -