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%0 Thesis
%A Jekat, Felix Michael
%T Development of a charge sensor in III-V semiconductor nanowires for scanning tunneling microscopy
%I RWTH Aachen University
%V Dissertation
%C Aachen
%M RWTH-2024-04614
%P 1 Online-Ressource : Illustrationen
%D 2024
%Z Veröffentlicht auf dem Publikationsserver der RWTH Aachen University
%Z Dissertation, RWTH Aachen University, 2024
%X This thesis presents key achievements needed to realize a single electron scanning tunneling microscope (SE-STM). A SE-STM combines the spatial resolution of a STM and the statistical information gained by counting single electrons. The design of the charge detector features two gate- controlled nanowire quantum dots (QD) in series. A third nanowire quantum dot or nanowire quantum point contact (QPC) acts as the sensor QD/QPC. The sensor QD/QPC is coupled to the double quantum dot by a floating gate. As soon as electrons tunnel through the double quantum dot, charges on the floating gate are set in motion. Due to the sensitivity of the QD/QPC current to the surrounding charge distribution, the charge state of the double quantum dot can be read out by analyzing the current changes of the sensor QD/QPC. With a SE-STM the full counting statistics of tunneling electrons can be analyzed down to the atomic length scale. Electrostatic simulations were carried out to optimize the floating gate design. The simulation reveals that the Si backgate and the finger gates adjacent to the floating gate are the biggest contributing factors to the cross capacitance of the floating gate, as they contribute  ≈ 50 
%F PUB:(DE-HGF)11
%9 Dissertation / PhD Thesis
%R 10.18154/RWTH-2024-04614
%U https://publications.rwth-aachen.de/record/985425