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@ARTICLE{Schneider:986718,
      author       = {Schneider, Daniel Stefan and Lucchesi, Leonardo and Reato,
                      Eros and Wang, Zhenyu and Piacentini, Agata and Bolten, Jens
                      and Marian, Damiano and Marin, Enrique G. and Radenovic,
                      Aleksandra and Wang, Zhenxing and Fiori, Gianluca and Kis,
                      Andras and Iannaccone, Giuseppe and Neumaier, Daniel and
                      Lemme, Max C.},
      title        = {{CVD} graphene contacts for lateral heterostructure
                      {M}o{S}2 field effect transistors},
      journal      = {npj 2D materials and applications},
      volume       = {8},
      number       = {1},
      issn         = {2397-7132},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {RWTH-2024-05330},
      pages        = {35},
      year         = {2024},
      cin          = {618710},
      ddc          = {670},
      cid          = {$I:(DE-82)618710_20170609$},
      pnm          = {OAPKF - Open-Access-Publikation mit Unterstützung der RWTH
                      Aachen University (021000-OAPKF) / QUEFORMAL - Quantum
                      Engineering for Machine Learning (829035) / GrapheneCore3 -
                      Graphene Flagship Core Project 3 (881603) / DFG project
                      G:(GEPRIS)407080863 - Skalierbare MoS2-basierte flexible
                      Bauelemente und Schaltkreise für drahtlose Kommunikation
                      (407080863) / DFG project G:(GEPRIS)412113712 - Ultimatives
                      Skalierungs- und Leistungspotential von MoS2
                      Feldeffekttransistoren ( ULTIMOS2) (412113712) / BMBF
                      16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC II - (BMBF-16ME0399) / BMBF 16ME0400 -
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC II - (16ME0400) / BMBF 03ZU1106AA - NeuroSys:
                      Memristor Crossbar Architekturen (Projekt A) - A
                      (03ZU1106AA) / BMBF 03ZU1106BA - NeuroSys: Skalierbare
                      Photonische Neuromorphe Schaltkreise (Projekt B) - A
                      (03ZU1106BA) / BMBF 03ZU1106CA - NeuroSys:
                      Algorithm-Hardware Co-Design (Projekt C) - A (03ZU1106CA)},
      pid          = {G:(DE-82)021000-OAPKF / G:(EU-Grant)829035 /
                      G:(EU-Grant)881603 / G:(GEPRIS)407080863 /
                      G:(GEPRIS)412113712 / G:(DE-82)BMBF-16ME0399 /
                      G:(BMBF)16ME0400 / G:(BMBF)03ZU1106AA / G:(BMBF)03ZU1106BA /
                      G:(BMBF)03ZU1106CA},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001217990800001},
      doi          = {10.1038/s41699-024-00471-y},
      url          = {https://publications.rwth-aachen.de/record/986718},
}