Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Illarionov, Yu Yu; Wang, Z.; Manna, B.; Stoll, S. L.; Knobloch, T.; Vexler, M. I.; Neumaier, D.; Grasser, T.; Uzlu, B.; Banshchikov, A. G.; Otto, M.; Waltl, M.; Ivanov, I. A.; Sokolov, N. S.; Lemme, Max C.; Sverdlov, V.

doi:SCOPUS:2-s2.0-85188138852

TY  - JOUR
AU  - Illarionov, Yu Yu
AU  - Knobloch, T.
AU  - Uzlu, B.
AU  - Banshchikov, A. G.
AU  - Ivanov, I. A.
AU  - Sverdlov, V.
AU  - Otto, M.
AU  - Stoll, S. L.
AU  - Vexler, M. I.
AU  - Waltl, M.
AU  - Wang, Z.
AU  - Manna, B.
AU  - Neumaier, D.
AU  - Lemme, Max C.
AU  - Sokolov, N. S.
AU  - Grasser, T.
TI  - Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators
JO  - npj 2D materials and applications
VL  - 8
SN  - 2397-7132
CY  - London
PB  - Nature Publishing Group
M1  - RWTH-2024-11007
SP  - 23
PY  - 2024
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:001187766400001
DO  - DOI:10.1038/s41699-024-00461-0
UR  - https://publications.rwth-aachen.de/record/997041
ER  -

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