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Contact Resistance Optimization in MoS2 Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

; ; ; ; ; ; ;

In
ACS applied materials & interfaces 17(16), Seiten/Artikel-Nr.:24526-24534

ImpressumWashington, DC : American Chemical Society

ISSN1944-8252

Online
DOI: 10.1021/acsami.4c21596

DOI: 10.18154/RWTH-2025-03122
URL: https://publications.rwth-aachen.de/record/1008726/files/1008726.pdf

Einrichtungen

  1. Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter (612020)
  2. Lehrstuhl für Elektronische Bauelemente (618710)


Thematische Einordnung (Klassifikation)
DDC: 600

OpenAccess:
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Dokumenttyp
Journal Article

Format
online, print

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-86000518689
WOS Core Collection: WOS:001442072600001

Interne Identnummern
RWTH-2025-03122
Datensatz-ID: 1008726

Beteiligte Länder
Germany, Netherlands

Lizenzstatus der Zeitschrift

 GO

Medline ; Creative Commons Attribution-NonCommercial-NoDerivs CC BY-NC-ND 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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618710
612020
 Record created 2025-03-24, last modified 2025-09-30
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