h1

h2

h3

h4

h5
h6
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png

Critical impact of source/drain surface modification treatment on the performance of 4h-21dntt otft

; ; ;

In
ACS applied electronic materials 7(6), Seiten/Artikel-Nr.:2583-2592

ImpressumWashington, DC : ACS Publications

ISSN2637-6113

Online
DOI: 10.1021/acsaelm.5c00043


Einrichtungen

  1. Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter (612020)


Thematische Einordnung (Klassifikation)
DDC: 620


Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
WOS Core Collection: WOS:001440382700001
SCOPUS: SCOPUS:2-s2.0-105001207589

Interne Identnummern
RWTH-2025-03213
Datensatz-ID: 1008880

Beteiligte Länder
Germany, Japan

Lizenzstatus der Zeitschrift

 GO


Medline ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

QR Code for this record

The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Electrical Engineering and Information Technology (Fac.6)
Public records
Publications database
612020

 Record created 2025-03-26, last modified 2025-09-30



Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)