BMBF 03ZU1106AD
NeuroSys: Memristor Crossbar Architekturen (Projekt A) - D
| Grant period | 2022-01-01 - 2024-12-31 |
| Funding body | Bundesministerium für Bildung und Forschung |
| BMBF | |
| Further information: | Homepage |
| Identifier | G:(BMBF)03ZU1106AD |
All known publications ...
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Journal Article
Integration of Low‐Voltage Nanoscale MoS 2 Memristors on CMOS Microchips
Advanced functional materials 2026, e27644 (2026) [10.1002/adfm.202527644]
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Journal Article
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
Advanced functional materials e26682 (2025) [10.1002/adfm.202526682]
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Journal Article
Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy
Nature Communications 16, 7433 (2025) [10.1038/s41467-025-62592-2]
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Journal Article
Volatile mos2 memristors with lateral silver ion migration for artificial neuron applications
Small science 5(5), 2400523 (2025) [10.1002/smsc.202400523]
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All known publications ...
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