h1

h2

h3

h4

h5
h6
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png

Processing and characterization of N-polar GaN/AlGaN HFETs grown on 200 mm sapphire substrates

; ; ; ; ; ; ; ; ;

In
Applied physics letters 127(17), Seiten/Artikel-Nr.:173302

ImpressumMelville, NY : American Inst. of Physics

ISSN0003-6951

This paper is part of the Special Topic on Frontiers in Nitride Semiconductors Research

Online
DOI: 10.1063/5.0299401


Einrichtungen

  1. Lehr- und Forschungsgebiet Technologie der Verbindungshalbleiter (612020)
  2. Lehrstuhl für Höchstfrequenzelektronik (618510)


Thematische Einordnung (Klassifikation)
DDC: 530


Dokumenttyp
Journal Article

Format
online

Sprache
English

Anmerkung
Peer reviewed article

Externe Identnummern
SCOPUS: SCOPUS:2-s2.0-105019747432
WOS Core Collection: WOS:001602868700013

Interne Identnummern
RWTH-2025-09053
Datensatz-ID: 1020514

Beteiligte Länder
Germany

Lizenzstatus der Zeitschrift

 GO

Medline ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
QR Code for this record

The record appears in these collections:
Document types > Articles > Journal Articles
Faculty of Electrical Engineering and Information Technology (Fac.6)
Documents in print
Public records
618510
612020
About RWTH
 Record created 2025-10-29, last modified 2025-11-11
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)