Antibonding and electronic instabilities in GdRu2X2 (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials

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Antibonding and electronic instabilities in GdRu2X2 (X = Si, Ge, and Sn): a new pathway toward developing centrosymmetric skyrmion materials - RWTH-2026-00262

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