Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metal-organic vapor-phase epitaxy

Grützmacher, D.; Zachau, M.; Meyer, R.; Berg, C.; Balk, P.; Koch, F.; Schäpers, T.; Lüth, H.

doi:1089-7550

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Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metal-organic vapor-phase epitaxy - RWTH-CONV-051563

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