Gast ::
| 001 | 174320 | ||
| 005 | 20240922203813.0 | ||
| 024 | 7 | _ | |2 ISSN |a 0022-0248 |
| 024 | 7 | _ | |2 INSPEC |a 3527807 |
| 024 | 7 | _ | |2 DOI |a 10.1016/0022-0248(89)90660-X |
| 024 | 7 | _ | |2 HSB |a ama8281 |
| 024 | 7 | _ | |2 SCOPUS |a SCOPUS:2-s2.0-0024715918 |
| 024 | 7 | _ | |2 WOS |a WOS:A1989AM75600031 |
| 037 | _ | _ | |a RWTH-CONV-051564 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |0 P:(DE-82)114219 |a Westphalen, R. |b 0 |e Author |
| 245 | _ | _ | |a Epilayers with extremely low dislocation densities grown by isoelectronic doping of hydride VPE grown InP |h online, print |
| 260 | _ | _ | |a Amsterdam |b North-Holland Publ. Co. |c 1989 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |b journal |m journal |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 591 | _ | _ | |a Germany |
| 700 | 1 | _ | |0 P:(DE-82)038020 |a Jürgensen, H. |b 1 |e Author |
| 700 | 1 | _ | |0 P:(DE-82)108534 |a Balk, P. |b 2 |e Author |
| 773 | _ | _ | |0 PERI:(DE-600)1466514-1 |a 10.1016/0022-0248(89)90660-X |n 4 |p 982-984 |t Journal of crystal growth |v 96 |x 0022-0248 |
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| 915 | 1 | _ | |0 StatID:(DE-HGF)0031 |2 StatID |a Peer reviewed article |
| 920 | 1 | _ | |0 I:(DE-82)ama216_20140620 |k ama216 |l Lehr- und Forschungsgebiet Halbleitertechnologie |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)616210_20140620 |k 616210 |l Lehrstuhl und Institut für Halbleitertechnik |x 1 |
| 970 | _ | _ | |a ama8281 |
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| 980 | _ | _ | |a I:(DE-82)ama216_20140620 |
| 980 | _ | _ | |a I:(DE-82)616210_20140620 |
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| Library | Collection | CLSMajor | CLSMinor | Language | Author |
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